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Atomic-scale investigations on the wet etching kinetics of Ge versus SiGe in acidic H2O2 solutions: a post operando synchrotron XPS analysis
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Atomic-scale investigations on the wet etching kinetics of Ge versus SiGe in acidic H2O2 solutions: a post operando synchrotron XPS analysis
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Date
2020
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Abrenica, Graniel
;
Lebedev, Mikhail
;
Fingerle, Mathias
;
Arnauts, Sophia
;
Bazzazian, Nina
;
Calvet, Wolfram
;
Porret, Clément
;
Bender, Hugo
;
Mayer, Thomas
;
De Gendt, Stefan
;
van Dorp, Dennis
Journal
Journal of Materials Chemistry C
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2106
since deposited on 2021-10-28
Acq. date: 2025-12-15
Citations
Metrics
Views
2106
since deposited on 2021-10-28
Acq. date: 2025-12-15
Citations