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Atomic-scale investigations on the wet etching kinetics of Ge versus SiGe in acidic H2O2 solutions: a post operando synchrotron XPS analysis

Date

2020
Journal article
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dc.contributor.authorAbrenica, Graniel
dc.contributor.authorLebedev, Mikhail
dc.contributor.authorFingerle, Mathias
dc.contributor.authorArnauts, Sophia
dc.contributor.authorBazzazian, Nina
dc.contributor.authorCalvet, Wolfram
dc.contributor.authorPorret, Clément
dc.contributor.authorBender, Hugo
dc.contributor.authorMayer, Thomas
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorvan Dorp, Dennis
dc.contributor.imecauthorAbrenica, Graniel
dc.contributor.imecauthorArnauts, Sophia
dc.contributor.imecauthorBazzazian, Nina
dc.contributor.imecauthorPorret, Clément
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.imecauthorvan Dorp, Dennis
dc.contributor.orcidimecPorret, Clément::0000-0002-4561-348X
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.contributor.orcidimecvan Dorp, Dennis::0000-0002-1085-4232
dc.date.accessioned2021-10-28T20:08:59Z
dc.date.available2021-10-28T20:08:59Z
dc.date.issued2020
dc.identifier.issn2050-7526
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/34587
dc.identifier.urlhttps://doi.org/10.1039/D0TC02763D
dc.source.beginpage10060
dc.source.endpage10070
dc.source.issue29
dc.source.journalJournal of Materials Chemistry C
dc.source.volume8
dc.title

Atomic-scale investigations on the wet etching kinetics of Ge versus SiGe in acidic H2O2 solutions: a post operando synchrotron XPS analysis

dc.typeJournal article
dspace.entity.typePublication
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