Publication:

A new technique to fabricate ultra-shallow-junctions, combining in-situ vapour HCl etching and in-situ doped epitaxial SiGe re-growth

Date

2004
Journal article
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dc.contributor.authorLoo, Roger
dc.contributor.authorCaymax, Matty
dc.contributor.authorMeunier-Beillard, Philippe
dc.contributor.authorPeytier, Ivan
dc.contributor.authorHolsteyns, Frank
dc.contributor.authorKubicek, Stefan
dc.contributor.authorVerheyen, Peter
dc.contributor.authorLindsay, Richard
dc.contributor.authorRichard, Olivier
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorHolsteyns, Frank
dc.contributor.imecauthorKubicek, Stefan
dc.contributor.imecauthorVerheyen, Peter
dc.contributor.imecauthorRichard, Olivier
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecRichard, Olivier::0000-0002-3994-8021
dc.date.accessioned2021-10-15T14:32:19Z
dc.date.available2021-10-15T14:32:19Z
dc.date.issued2004
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/9219
dc.source.beginpage63
dc.source.endpage67
dc.source.issue1_4
dc.source.journalApplied Surface Science
dc.source.volume224
dc.title

A new technique to fabricate ultra-shallow-junctions, combining in-situ vapour HCl etching and in-situ doped epitaxial SiGe re-growth

dc.typeJournal article
dspace.entity.typePublication
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