Publication:

Low temperature influence on long channel STI last process relaxed and strained Ge pFinFETs

Date

2017
Proceedings Paper
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dc.contributor.authorOliveira, Alberto
dc.contributor.authorAgopian, Paula
dc.contributor.authorMartino, Joao
dc.contributor.authorSimoen, Eddy
dc.contributor.authorMitard, Jerome
dc.contributor.authorWitters, Liesbeth
dc.contributor.authorCollaert, Nadine
dc.contributor.authorClaeys, Cor
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorWitters, Liesbeth
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.date.accessioned2021-10-24T10:24:37Z
dc.date.available2021-10-24T10:24:37Z
dc.date.embargo9999-12-31
dc.date.issued2017
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/29109
dc.identifier.urlhttp://ieeexplore.ieee.org/document/8309245/
dc.source.beginpage1
dc.source.conferenceIEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference - S3S
dc.source.conferencedate16/10/2017
dc.source.conferencelocationBurlingame, CA USA
dc.source.endpage3
dc.title

Low temperature influence on long channel STI last process relaxed and strained Ge pFinFETs

dc.typeProceedings paper
dspace.entity.typePublication
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