Publication:

Simulation study for the CDM ESD behaviour of the grounded-gate nMOS

Date

1996
Journal article
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dc.contributor.authorRuss, Christian
dc.contributor.authorVerhaege, Koen
dc.contributor.authorBock, Karlheinz
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorMaes, Herman
dc.contributor.imecauthorGroeseneken, Guido
dc.date.accessioned2021-09-29T15:20:18Z
dc.date.available2021-09-29T15:20:18Z
dc.date.embargo9999-12-31
dc.date.issued1996
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/1445
dc.source.beginpage1739
dc.source.endpage1742
dc.source.journalMicroelectronics and Reliability
dc.source.volume36
dc.title

Simulation study for the CDM ESD behaviour of the grounded-gate nMOS

dc.typeJournal article
dspace.entity.typePublication
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