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Direct copper electrochemical deposition on Ru-based substrates for advanced interconnects target 30 nm and ½ pitch lines: from coupon to full-wafer experiments

Date

2013
Journal article
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dc.contributor.authorArmini, Silvia
dc.contributor.authorEl-Mekki, Zaid
dc.contributor.authorSwerts, Johan
dc.contributor.authorNagar, Magi
dc.contributor.authorDemuynck, Steven
dc.contributor.imecauthorArmini, Silvia
dc.contributor.imecauthorEl-Mekki, Zaid
dc.contributor.imecauthorSwerts, Johan
dc.contributor.imecauthorDemuynck, Steven
dc.contributor.orcidimecArmini, Silvia::0000-0003-0578-3422
dc.contributor.orcidimecEl-Mekki, Zaid::0000-0002-9851-9139
dc.date.accessioned2021-10-21T06:42:47Z
dc.date.available2021-10-21T06:42:47Z
dc.date.issued2013
dc.identifier.issn0013-4651
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/21981
dc.source.beginpageD1
dc.source.endpageD6
dc.source.issue3
dc.source.journalJournal of the Electrochemical Society
dc.source.volume160
dc.title

Direct copper electrochemical deposition on Ru-based substrates for advanced interconnects target 30 nm and ½ pitch lines: from coupon to full-wafer experiments

dc.typeJournal article
dspace.entity.typePublication
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