Publication:

Characterization of trap density in Indium-Gallium-Zinc-Oxide thin films by admittance measurements in multi-finger MOS structures

Date

2024
Journal article
https://doi.org/10.1016/j.sse.2024.108866
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dc.contributor.authorTang, Hongwei
dc.contributor.authorBelmonte, Attilio
dc.contributor.authorLin, Dennis
dc.contributor.authorAfanasiev, Valeri
dc.contributor.authorVerdonck, Patrick
dc.contributor.authorVaisman Chasin, Adrian
dc.contributor.authorDekkers, Harold
dc.contributor.authorDelhougne, Romain
dc.contributor.authorVan Houdt, Jan
dc.contributor.authorKar, Gouri Sankar
dc.contributor.imecauthorTang, Hongwei
dc.contributor.imecauthorBelmonte, Attilio
dc.contributor.imecauthorLin, Dennis
dc.contributor.imecauthorVerdonck, Patrick
dc.contributor.imecauthorDekkers, Harold
dc.contributor.imecauthorDelhougne, Romain
dc.contributor.imecauthorVan Houdt, Jan
dc.contributor.imecauthorKar, Gouri Sankar
dc.contributor.imecauthorAfanasiev, Valeri
dc.contributor.imecauthorVaisman Chasin, Adrian
dc.contributor.orcidimecTang, Hongwei::0009-0005-1345-5551
dc.contributor.orcidimecBelmonte, Attilio::0000-0002-3947-1948
dc.contributor.orcidimecLin, Dennis::0000-0002-1577-6050
dc.contributor.orcidimecVerdonck, Patrick::0000-0003-2454-0602
dc.contributor.orcidimecDekkers, Harold::0000-0003-4778-5709
dc.contributor.orcidimecDelhougne, Romain::0009-0009-0129-709X
dc.contributor.orcidimecVan Houdt, Jan::0000-0003-1381-6925
dc.contributor.orcidimecAfanasiev, Valeri::0000-0001-5018-4539
dc.contributor.orcidimecVaisman Chasin, Adrian::0000-0002-9940-0260
dc.date.accessioned2024-08-08T13:28:49Z
dc.date.available2024-03-27T17:34:17Z
dc.date.available2024-08-08T13:28:49Z
dc.date.issued2024
dc.description.wosFundingTextThe authors would like to thank the support of IMEC's Industrial Partners of the Active Memory Program.
dc.identifier.doi10.1016/j.sse.2024.108866
dc.identifier.issn0038-1101
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/43738
dc.publisherPERGAMON-ELSEVIER SCIENCE LTD
dc.source.beginpageArt. 108866
dc.source.endpageN/A
dc.source.issueApril
dc.source.journalSOLID-STATE ELECTRONICS
dc.source.numberofpages6
dc.source.volume214
dc.subject.keywordsOF-STATES
dc.subject.keywordsEXTRACTION
dc.title

Characterization of trap density in Indium-Gallium-Zinc-Oxide thin films by admittance measurements in multi-finger MOS structures

dc.typeJournal article
dspace.entity.typePublication
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