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Origin of the threshold voltage instability in SiO2/HfO2 dual layer gate dielectrics
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Origin of the threshold voltage instability in SiO2/HfO2 dual layer gate dielectrics
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Date
2003
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Kerber, Andreas
;
Cartier, Eduard
;
Pantisano, Luigi
;
Degraeve, Robin
;
Kauerauf, Thomas
;
Kim, Young-Chang
;
Hou, A.
;
Groeseneken, Guido
;
Maes, Herman
;
Schwalke, U.
Journal
IEEE Electron Device Letters
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1925
since deposited on 2021-10-15
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Acq. date: 2025-12-09
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Metrics
Views
1925
since deposited on 2021-10-15
1
last month
Acq. date: 2025-12-09
Citations