Publication:
Origin of the threshold voltage instability in SiO2/HfO2 dual layer gate dielectrics
Date
| dc.contributor.author | Kerber, Andreas | |
| dc.contributor.author | Cartier, Eduard | |
| dc.contributor.author | Pantisano, Luigi | |
| dc.contributor.author | Degraeve, Robin | |
| dc.contributor.author | Kauerauf, Thomas | |
| dc.contributor.author | Kim, Young-Chang | |
| dc.contributor.author | Hou, A. | |
| dc.contributor.author | Groeseneken, Guido | |
| dc.contributor.author | Maes, Herman | |
| dc.contributor.author | Schwalke, U. | |
| dc.contributor.imecauthor | Degraeve, Robin | |
| dc.contributor.imecauthor | Groeseneken, Guido | |
| dc.date.accessioned | 2021-10-15T05:08:48Z | |
| dc.date.available | 2021-10-15T05:08:48Z | |
| dc.date.issued | 2003 | |
| dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/7728 | |
| dc.source.beginpage | 87 | |
| dc.source.endpage | 89 | |
| dc.source.issue | 2 | |
| dc.source.journal | IEEE Electron Device Letters | |
| dc.source.volume | 24 | |
| dc.title | Origin of the threshold voltage instability in SiO2/HfO2 dual layer gate dielectrics | |
| dc.type | Journal article | |
| dspace.entity.type | Publication | |
| Files | ||
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