Publication:

Epitaxial growth of Ga-doped SiGe for reduction of contact resistance in finFET source/drain materials

Date

2019-10
Proceedings Paper
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dc.contributor.authorMargetis, Joe
dc.contributor.authorKohen, David
dc.contributor.authorPorret, Clément
dc.contributor.authorPetersen Barbosa Lima, Lucas
dc.contributor.authorKhazaka, Rami
dc.contributor.authorRengo, Gianluca
dc.contributor.authorLoo, Roger
dc.contributor.authorTolle, John
dc.contributor.authorDemos, Alex
dc.contributor.imecauthorPorret, Clément
dc.contributor.imecauthorPetersen Barbosa Lima, Lucas
dc.contributor.imecauthorKhazaka, Rami
dc.contributor.imecauthorRengo, Gianluca
dc.contributor.imecauthorLoo, Roger
dc.contributor.orcidimecPorret, Clément::0000-0002-4561-348X
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.accessioned2021-10-27T13:30:26Z
dc.date.available2021-10-27T13:30:26Z
dc.date.issued2019-10
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/33535
dc.identifier.urlhttp://ecst.ecsdl.org/content/93/1/7.abstract
dc.source.beginpage7
dc.source.conference2nd Joint ISTDM / ICSI 2019 Conference
dc.source.conferencedate2/06/2019
dc.source.conferencelocationMadison USA
dc.source.endpage10
dc.title

Epitaxial growth of Ga-doped SiGe for reduction of contact resistance in finFET source/drain materials

dc.typeProceedings paper
dspace.entity.typePublication
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