On the gate- and drain-voltage dependence of the RTS amplitude in submicron MOSTs

dc.contributor.author	Simoen, Eddy
dc.contributor.author	Dierickx, Bart
dc.contributor.author	De Canne, B.
dc.contributor.author	Thoma, F.
dc.contributor.author	Claeys, Cor
dc.contributor.imecauthor	Simoen, Eddy
dc.contributor.orcidimec	Simoen, Eddy::0000-0002-5218-4046
dc.date.accessioned	2021-09-29T12:47:45Z
dc.date.available	2021-09-29T12:47:45Z
dc.date.embargo	9999-12-31
dc.date.issued	1994
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/354
dc.source.beginpage	353
dc.source.endpage	358
dc.source.journal	Applied Physics A
dc.source.volume	58
dc.title	On the gate- and drain-voltage dependence of the RTS amplitude in submicron MOSTs
dc.type	Journal article
dspace.entity.type	Publication
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