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Interplay between statistical variability and reliability in contemporary p-MOSFETs: measurements vs. simulated

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dc.contributor.authorHussin, Razaidi
dc.contributor.authorAmoroso, Salvatore
dc.contributor.authorGerrer, Louis
dc.contributor.authorKaczer, Ben
dc.contributor.authorWeckx, Pieter
dc.contributor.authorFranco, Jacopo
dc.contributor.authorVanderheyden, Annelies
dc.contributor.authorVanhaeren, Danielle
dc.contributor.authorHoriguchi, Naoto
dc.contributor.authorAsenov, Asen
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorWeckx, Pieter
dc.contributor.imecauthorFranco, Jacopo
dc.contributor.imecauthorVanhaeren, Danielle
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecFranco, Jacopo::0000-0002-7382-8605
dc.contributor.orcidimecVanhaeren, Danielle::0000-0001-8624-9533
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.date.accessioned2021-10-22T02:10:41Z
dc.date.available2021-10-22T02:10:41Z
dc.date.issued2014
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/23975
dc.identifier.urlhttp://dx.doi.org/10.1109/TED.2014.2336698
dc.source.beginpage3265
dc.source.endpage3273
dc.source.issue9
dc.source.journalIEEE Transactions on Electron Devices
dc.source.volume61
dc.title

Interplay between statistical variability and reliability in contemporary p-MOSFETs: measurements vs. simulated

dc.typeJournal article
dspace.entity.typePublication
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