Publication:

Analysis of homogeneous broadening in n-type doped Ge layers on Si for laser application

Date

2017
Proceedings Paper
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dc.contributor.authorSrinivasan, Ashwyn
dc.contributor.authorPorret, Clément
dc.contributor.authorPantouvaki, Marianna
dc.contributor.authorShimura, Yosuke
dc.contributor.authorGieregat, Pieter
dc.contributor.authorLoo, Roger
dc.contributor.authorVan Campenhout, Joris
dc.contributor.authorVan Thourhout, Dries
dc.contributor.imecauthorSrinivasan, Ashwyn
dc.contributor.imecauthorPorret, Clément
dc.contributor.imecauthorPantouvaki, Marianna
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorVan Campenhout, Joris
dc.contributor.imecauthorVan Thourhout, Dries
dc.contributor.orcidimecPorret, Clément::0000-0002-4561-348X
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecVan Campenhout, Joris::0000-0003-0778-2669
dc.contributor.orcidimecVan Thourhout, Dries::0000-0003-0111-431X
dc.date.accessioned2021-10-24T14:05:22Z
dc.date.available2021-10-24T14:05:22Z
dc.date.embargo9999-12-31
dc.date.issued2017
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/29489
dc.identifier.urlhttp://ieeexplore.ieee.org/document/8116120/
dc.source.beginpage311
dc.source.conference30th Annual Conference of the IEEE Photonics Society - IPC
dc.source.conferencedate1/10/2017
dc.source.conferencelocationLake Buona Vista, FL USA
dc.source.endpage312
dc.title

Analysis of homogeneous broadening in n-type doped Ge layers on Si for laser application

dc.typeProceedings paper
dspace.entity.typePublication
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