Total-Ionizing-Dose Effects on Polycrystalline-Si Channel Vertical-Charge-Trapping Nand Devices

Cao, Jingchen; Wang, Peng Fei; Li, Xun; Guo, Zixiang; Zhang, En Xia; Reed, Robert A.; Alles, Michael L.; Schrimpf, Ronald D.; Fleetwood, Daniel M.; Arreghini, Antonio; Rosmeulen, Maarten; Bastos, Joao P.; Van den Bosch, Geert; Linten, Dimitri

doi:10.1109/tns.2021.3133407

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Total-Ionizing-Dose Effects on Polycrystalline-Si Channel Vertical-Charge-Trapping Nand Devices

Date

2022

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https://doi.org/10.1109/tns.2021.3133407

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IEEE TRANSACTIONS ON NUCLEAR SCIENCE

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Acq. date: 2026-08-07

Total-Ionizing-Dose Effects on Polycrystalline-Si Channel Vertical-Charge-Trapping Nand Devices

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