Publication:
Total-Ionizing-Dose Effects on Polycrystalline-Si Channel Vertical-Charge-Trapping Nand Devices
| dc.contributor.author | Cao, Jingchen | |
| dc.contributor.author | Wang, Peng Fei | |
| dc.contributor.author | Li, Xun | |
| dc.contributor.author | Guo, Zixiang | |
| dc.contributor.author | Zhang, En Xia | |
| dc.contributor.author | Reed, Robert A. | |
| dc.contributor.author | Alles, Michael L. | |
| dc.contributor.author | Schrimpf, Ronald D. | |
| dc.contributor.author | Fleetwood, Daniel M. | |
| dc.contributor.author | Arreghini, Antonio | |
| dc.contributor.author | Rosmeulen, Maarten | |
| dc.contributor.author | Bastos, Joao P. | |
| dc.contributor.author | Van den Bosch, Geert | |
| dc.contributor.author | Linten, Dimitri | |
| dc.contributor.imecauthor | Arreghini, Antonio | |
| dc.contributor.imecauthor | Rosmeulen, Maarten | |
| dc.contributor.imecauthor | Bastos, Joao P. | |
| dc.contributor.imecauthor | Van den Bosch, Geert | |
| dc.contributor.imecauthor | Linten, Dimitri | |
| dc.contributor.orcidimec | Arreghini, Antonio::0000-0002-7493-9681 | |
| dc.contributor.orcidimec | Rosmeulen, Maarten::0000-0002-3663-7439 | |
| dc.contributor.orcidimec | Van den Bosch, Geert::0000-0001-9971-6954 | |
| dc.contributor.orcidimec | Linten, Dimitri::0000-0001-8434-1838 | |
| dc.date.accessioned | 2022-06-28T14:42:43Z | |
| dc.date.available | 2022-03-30T02:07:18Z | |
| dc.date.available | 2022-05-20T07:47:28Z | |
| dc.date.available | 2022-06-28T14:42:43Z | |
| dc.date.issued | 2022 | |
| dc.identifier.doi | 10.1109/TNS.2021.3133407 | |
| dc.identifier.issn | 0018-9499 | |
| dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/39554 | |
| dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | |
| dc.source.beginpage | 314 | |
| dc.source.endpage | 320 | |
| dc.source.issue | 3 | |
| dc.source.journal | IEEE TRANSACTIONS ON NUCLEAR SCIENCE | |
| dc.source.numberofpages | 7 | |
| dc.source.volume | 69 | |
| dc.subject.keywords | RADIATION RESPONSE | |
| dc.subject.keywords | BORDER TRAPS | |
| dc.subject.keywords | OXIDE | |
| dc.subject.keywords | INTERFACE | |
| dc.subject.keywords | RETENTION | |
| dc.subject.keywords | TRANSPORT | |
| dc.subject.keywords | BUILDUP | |
| dc.subject.keywords | IMPACT | |
| dc.title | Total-Ionizing-Dose Effects on Polycrystalline-Si Channel Vertical-Charge-Trapping Nand Devices | |
| dc.type | Journal article | |
| dspace.entity.type | Publication | |
| Files | ||
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