Publication:

Impact of Al2O3 position on performances and reliability in high-k metal gated DRAM periphery transistors

Date

2013
Proceedings Paper
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dc.contributor.authorAoulaiche, Marc
dc.contributor.authorFederico, Antonio
dc.contributor.authorSimoen, Eddy
dc.contributor.authorRitzenthaler, Romain
dc.contributor.authorSchram, Tom
dc.contributor.authorArimura, Hiroaki
dc.contributor.authorCho, Moon Ju
dc.contributor.authorKauerauf, Thomas
dc.contributor.authorCrupi, Felice
dc.contributor.authorSpessot, Alessio
dc.contributor.authorCaillat, Christian
dc.contributor.authorFazan, Pierre
dc.contributor.authorNa, Hoon Joo
dc.contributor.authorSon, Yunik
dc.contributor.authorNoh, Kyung Bong
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorHoriguchi, Naoto
dc.contributor.authorThean, Aaron
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorRitzenthaler, Romain
dc.contributor.imecauthorSchram, Tom
dc.contributor.imecauthorArimura, Hiroaki
dc.contributor.imecauthorSpessot, Alessio
dc.contributor.imecauthorFazan, Pierre
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.imecauthorThean, Aaron
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecRitzenthaler, Romain::0000-0002-8615-3272
dc.contributor.orcidimecSchram, Tom::0000-0003-1533-7055
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.date.accessioned2021-10-21T06:42:41Z
dc.date.available2021-10-21T06:42:41Z
dc.date.embargo9999-12-31
dc.date.issued2013
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/21978
dc.source.beginpage190
dc.source.conference43rd European Solid-State Device Research Conference - ESSDERC
dc.source.conferencedate16/09/2013
dc.source.conferencelocationBucharest Romania
dc.source.endpage193
dc.title

Impact of Al2O3 position on performances and reliability in high-k metal gated DRAM periphery transistors

dc.typeProceedings paper
dspace.entity.typePublication
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