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Self-aligned double patterning of 1x nm FinFETs; a new device integration through the challenging geometry
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Self-aligned double patterning of 1x nm FinFETs; a new device integration through the challenging geometry
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Date
2013
Proceedings Paper
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Kim, Min-Soo
;
Vandeweyer, Tom
;
Altamirano Sanchez, Efrain
;
Dekkers, Harold
;
Van Besien, Els
;
Tsvetanova, Diana
;
Richard, Olivier
;
Chew, Soon Aik
;
Boccardi, Guillaume
;
Horiguchi, Naoto
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1857
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Acq. date: 2025-12-16
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Metrics
Views
1857
since deposited on 2021-10-21
2
last month
1
last week
Acq. date: 2025-12-16
Citations