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Comparison between Si/SiO2 mid-gap interface states and deep levels associated with silicon-oxygen superlattices in p-type silicon

Date

2016
Journal article
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dc.contributor.authorSimoen, Eddy
dc.contributor.authorJayachandran, Suseendran
dc.contributor.authorDelabie, Annelies
dc.contributor.authorCaymax, Matty
dc.contributor.authorHeyns, Marc
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorJayachandran, Suseendran
dc.contributor.imecauthorDelabie, Annelies
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.accessioned2021-10-23T14:58:34Z
dc.date.available2021-10-23T14:58:34Z
dc.date.embargo9999-12-31
dc.date.issued2016
dc.identifier.issn1610-1634
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/27319
dc.identifier.urlhttp://onlinelibrary.wiley.com/doi/10.1002/pssc.201600018/abstract
dc.source.beginpage718
dc.source.endpage723
dc.source.issue10_12
dc.source.journalPhysica Status Solidi C
dc.source.volume13
dc.title

Comparison between Si/SiO2 mid-gap interface states and deep levels associated with silicon-oxygen superlattices in p-type silicon

dc.typeJournal article
dspace.entity.typePublication
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