Publication:

Area-selective Ru ALD by amorphous carbon modification using H plasma: from atomistic modeling to full wafer process integration

Date

2020
Journal article
https://doi.org/10.1039/d0ma00462f
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dc.contributor.authorZyulkov, Ivan
dc.contributor.authorVoronina, Ekaterina
dc.contributor.authorKrishtab, Mikhail
dc.contributor.authorVoloshin, Dmitry
dc.contributor.authorChan, BT
dc.contributor.authorMankelevich, Yuri
dc.contributor.authorRakhimova, Tatyana
dc.contributor.authorArmini, Silvia
dc.contributor.authorDe Gendt, Stefan
dc.contributor.imecauthorZyulkov, Ivan
dc.contributor.imecauthorKrishtab, Mikhail
dc.contributor.imecauthorChan, B. T.
dc.contributor.imecauthorArmini, Silvia
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.imecauthorChan, BT
dc.contributor.orcidextVoronina, Ekaterina::0000-0001-7946-215X
dc.contributor.orcidimecZyulkov, Ivan::0000-0002-4427-9168
dc.contributor.orcidimecKrishtab, Mikhail::0000-0001-6215-8506
dc.contributor.orcidimecArmini, Silvia::0000-0003-0578-3422
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.contributor.orcidimecChan, BT::0000-0003-2890-0388
dc.date.accessioned2022-01-06T13:00:49Z
dc.date.available2021-11-02T16:03:56Z
dc.date.available2022-01-06T13:00:49Z
dc.date.issued2020
dc.identifier.doi10.1039/d0ma00462f
dc.identifier.issn2633-5409
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/38099
dc.publisherROYAL SOC CHEMISTRY
dc.source.beginpage3049
dc.source.endpage3057
dc.source.issue8
dc.source.journalMATERIALS ADVANCES
dc.source.numberofpages9
dc.source.volume1
dc.subject.keywordsLAYER DEPOSITION
dc.subject.keywordsFILMS
dc.subject.keywordsRUTHENIUM
dc.subject.keywordsRUO4-PRECURSOR
dc.title

Area-selective Ru ALD by amorphous carbon modification using H plasma: from atomistic modeling to full wafer process integration

dc.typeJournal article
dspace.entity.typePublication
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