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Origin of the performances degradation of 2D-based MOSFETs in the sub-10 nm regime: a first-principles study
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Origin of the performances degradation of 2D-based MOSFETs in the sub-10 nm regime: a first-principles study
Date
2016
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Lu, Augustin
;
Pourtois, Geoffrey
;
Agarwal, Saurabh
;
Afzalian, Aryan
;
Radu, Iuliana
;
Houssa, Michel
Journal
Applied Physics Letters
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1925
since deposited on 2021-10-23
Acq. date: 2025-10-30
Citations
Metrics
Views
1925
since deposited on 2021-10-23
Acq. date: 2025-10-30
Citations