Origin of the performances degradation of 2D-based MOSFETs in the sub-10 nm regime: a first-principles study

dc.contributor.author	Lu, Augustin
dc.contributor.author	Pourtois, Geoffrey
dc.contributor.author	Agarwal, Saurabh
dc.contributor.author	Afzalian, Aryan
dc.contributor.author	Radu, Iuliana
dc.contributor.author	Houssa, Michel
dc.contributor.imecauthor	Pourtois, Geoffrey
dc.contributor.imecauthor	Afzalian, Aryan
dc.contributor.imecauthor	Radu, Iuliana
dc.contributor.imecauthor	Houssa, Michel
dc.contributor.orcidimec	Pourtois, Geoffrey::0000-0003-2597-8534
dc.contributor.orcidimec	Afzalian, Aryan::0000-0002-5260-0281
dc.contributor.orcidimec	Radu, Iuliana::0000-0002-7230-7218
dc.contributor.orcidimec	Houssa, Michel::0000-0003-1844-3515
dc.date.accessioned	2021-10-23T12:21:35Z
dc.date.available	2021-10-23T12:21:35Z
dc.date.issued	2016
dc.identifier.issn	0003-6951
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/26932
dc.identifier.url	http://scitation.aip.org/content/aip/journal/apl/108/4/10.1063/1.4940685
dc.source.beginpage	43504
dc.source.issue	4
dc.source.journal	Applied Physics Letters
dc.source.volume	108
dc.title	Origin of the performances degradation of 2D-based MOSFETs in the sub-10 nm regime: a first-principles study
dc.type	Journal article
dspace.entity.type	Publication
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