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Fabrication of porogen residue free ultra low-k PECVD material by subsequent H2-afterglow plasma treatment and UV curing
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Fabrication of porogen residue free ultra low-k PECVD material by subsequent H2-afterglow plasma treatment and UV curing
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Date
2010
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Urbanowicz, Adam
;
Vanstreels, Kris
;
Verdonck, Patrick
;
Shamiryan, Denis
;
Cremel, Maxime
;
De Gendt, Stefan
;
Baklanov, Mikhaïl
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1942
since deposited on 2021-10-18
Acq. date: 2026-01-08
Citations
Metrics
Views
1942
since deposited on 2021-10-18
Acq. date: 2026-01-08
Citations