Fabrication of porogen residue free ultra low-k PECVD material by subsequent H2-afterglow plasma treatment and UV curing

dc.contributor.author	Urbanowicz, Adam
dc.contributor.author	Vanstreels, Kris
dc.contributor.author	Verdonck, Patrick
dc.contributor.author	Shamiryan, Denis
dc.contributor.author	Cremel, Maxime
dc.contributor.author	De Gendt, Stefan
dc.contributor.author	Baklanov, Mikhaïl
dc.contributor.imecauthor	Vanstreels, Kris
dc.contributor.imecauthor	Verdonck, Patrick
dc.contributor.imecauthor	De Gendt, Stefan
dc.contributor.orcidimec	Vanstreels, Kris::0000-0002-4420-0966
dc.contributor.orcidimec	Verdonck, Patrick::0000-0003-2454-0602
dc.contributor.orcidimec	De Gendt, Stefan::0000-0003-3775-3578
dc.date.accessioned	2021-10-18T22:34:37Z
dc.date.available	2021-10-18T22:34:37Z
dc.date.issued	2010
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/18116
dc.source.beginpage	65
dc.source.conference	Advanced Metallization Confererce 2009 - AMC 2009
dc.source.conferencedate	13/10/2009
dc.source.conferencelocation	Baltimore, MD USA
dc.source.endpage	71
dc.title	Fabrication of porogen residue free ultra low-k PECVD material by subsequent H2-afterglow plasma treatment and UV curing
dc.type	Proceedings paper
dspace.entity.type	Publication
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