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On the recoverable and permanent components of hot carrier and NBTI in Si pMOSFETs and their implications in Si0.45Ge0.55 pMOSFETs
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On the recoverable and permanent components of hot carrier and NBTI in Si pMOSFETs and their implications in Si0.45Ge0.55 pMOSFETs
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Date
2011
Proceedings Paper
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21420.pdf
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Franco, Jacopo
;
Kaczer, Ben
;
Eneman, Geert
;
Roussel, Philippe
;
Cho, Moon Ju
;
Mitard, Jerome
;
Witters, Liesbeth
;
Hoffmann, Thomas Y.
;
Groeseneken, Guido
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1798
since deposited on 2021-10-19
Acq. date: 2025-12-18
Citations
Metrics
Views
1798
since deposited on 2021-10-19
Acq. date: 2025-12-18
Citations