Publication:

Effect of postdeposition anneal conditions on defect density of HfO2 layers measured by wet etching

Date

2004
Journal article
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dc.contributor.authorClaes, Martine
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorWitters, Thomas
dc.contributor.authorKaushik, Vidya
dc.contributor.authorConard, Thierry
dc.contributor.authorZhao, Chao
dc.contributor.authorManabe, Y.
dc.contributor.authorDelabie, Annelies
dc.contributor.authorRöhr, Erika
dc.contributor.authorChen, Jerry
dc.contributor.authorTsai, Wilman
dc.contributor.authorHeyns, Marc
dc.contributor.imecauthorClaes, Martine
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.imecauthorWitters, Thomas
dc.contributor.imecauthorConard, Thierry
dc.contributor.imecauthorDelabie, Annelies
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.contributor.orcidimecConard, Thierry::0000-0002-4298-5851
dc.date.accessioned2021-10-15T12:52:43Z
dc.date.available2021-10-15T12:52:43Z
dc.date.issued2004
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/8687
dc.source.beginpageF269
dc.source.endpageF275
dc.source.issue11
dc.source.journalJournal of the Electrochemical Society
dc.source.volume151
dc.title

Effect of postdeposition anneal conditions on defect density of HfO2 layers measured by wet etching

dc.typeJournal article
dspace.entity.typePublication
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