Publication:

Selectivity tuning by Peroxide concentration for the selective etching of SiGe20 to Si and SiGe40 to SiGe20

Date

2023-04-19
Proceedings Paper
https://doi.org/10.4028/p-Vl0z4a
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dc.contributor.authorLopez Villanueva1, Francisco Javier
dc.contributor.authorAltamirano Sanchez, Efrain
dc.contributor.imecauthorAltamirano Sanchez, Efrain
dc.contributor.orcidimecAltamirano Sanchez, Efrain::0000-0003-3235-6055
dc.date.accessioned2025-02-10T13:31:27Z
dc.date.available2023-09-17T23:21:02Z
dc.date.available2025-02-10T13:31:27Z
dc.date.embargo9999-12-31
dc.date.issued2023-04-19
dc.identifier.doi10.4028/p-Vl0z4a
dc.identifier.issn1662-9779, Vol. 346, pp 29-33
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/42556
dc.publisherTrans Tech Publications
dc.source.beginpage29
dc.source.conferenceUCPSS - 16th International Symposium on Ultra Clean Processing of Semiconductor Surfaces
dc.source.conferencedate11-13 Sept 2023
dc.source.conferencelocationBrugge
dc.source.endpage33
dc.source.journalSolid State Phenomena; Vol. 346
dc.source.numberofpages5
dc.title

Selectivity tuning by Peroxide concentration for the selective etching of SiGe20 to Si and SiGe40 to SiGe20

dc.typeProceedings paper
dspace.entity.typePublication
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