Publication:

Epitaxial CVD growth of ultra-thin Si passivation layers on strained Ge Fin structures

Date

2017-09
Proceedings Paper
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dc.contributor.authorLoo, Roger
dc.contributor.authorArimura, Hiroaki
dc.contributor.authorCott, Daire
dc.contributor.authorWitters, Liesbeth
dc.contributor.authorPourtois, Geoffrey
dc.contributor.authorSchulze, Andreas
dc.contributor.authorDouhard, Bastien
dc.contributor.authorVanherle, Wendy
dc.contributor.authorEneman, Geert
dc.contributor.authorRichard, Olivier
dc.contributor.authorFavia, Paola
dc.contributor.authorMitard, Jerome
dc.contributor.authorMocuta, Dan
dc.contributor.authorLanger, Robert
dc.contributor.authorCollaert, Nadine
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorArimura, Hiroaki
dc.contributor.imecauthorCott, Daire
dc.contributor.imecauthorWitters, Liesbeth
dc.contributor.imecauthorPourtois, Geoffrey
dc.contributor.imecauthorDouhard, Bastien
dc.contributor.imecauthorVanherle, Wendy
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorRichard, Olivier
dc.contributor.imecauthorFavia, Paola
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorLanger, Robert
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecPourtois, Geoffrey::0000-0003-2597-8534
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.contributor.orcidimecRichard, Olivier::0000-0002-3994-8021
dc.contributor.orcidimecFavia, Paola::0000-0002-1019-3497
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecLanger, Robert::0000-0002-1132-3468
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.date.accessioned2021-10-24T08:12:34Z
dc.date.available2021-10-24T08:12:34Z
dc.date.issued2017-09
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/28851
dc.identifier.urlhttp://ecst.ecsdl.org/content/80/4/241.abstract
dc.source.beginpage241
dc.source.conference232nd ECS Fall Meeting: Semiconductor Process Integration 10
dc.source.conferencedate1/10/2017
dc.source.conferencelocationNational Harbor, MD USA
dc.source.endpage252
dc.title

Epitaxial CVD growth of ultra-thin Si passivation layers on strained Ge Fin structures

dc.typeProceedings paper
dspace.entity.typePublication
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