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Impact of the TiN layer thickness on the low-frequency noise and static device performance of n-channel MuGFETs
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Impact of the TiN layer thickness on the low-frequency noise and static device performance of n-channel MuGFETs
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Date
2009
Proceedings Paper
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18109.pdf
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Rodrigues, Michele
;
Mercha, Abdelkarim
;
Collaert, Nadine
;
Simoen, Eddy
;
Claeys, Cor
;
Martino, J.A.
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1799
since deposited on 2021-10-18
Acq. date: 2025-12-12
Citations
Metrics
Views
1799
since deposited on 2021-10-18
Acq. date: 2025-12-12
Citations