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Design of operational transconductance amplifier with Gate-All-Around Nanosheet MOSFET using experimental data from room temperature to 200 degrees C
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Design of operational transconductance amplifier with Gate-All-Around Nanosheet MOSFET using experimental data from room temperature to 200 degrees C
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Date
2022
Journal article
https://doi.org/10.1016/j.sse.2022.108238
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Sousa, Julia C. S.
;
Perina, Welder F.
;
Rangel, Roberto
;
Simoen, Eddy
;
Veloso, Anabela
;
Martino, Joao A.
;
Agopian, Paula G. D.
Journal
SOLID-STATE ELECTRONICS
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1302
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Acq. date: 2026-01-06
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Views
1302
since deposited on 2022-05-27
2
last month
2
last week
Acq. date: 2026-01-06
Citations