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Design of operational transconductance amplifier with Gate-All-Around Nanosheet MOSFET using experimental data from room temperature to 200 degrees C

 
dc.contributor.authorSousa, Julia C. S.
dc.contributor.authorPerina, Welder F.
dc.contributor.authorRangel, Roberto
dc.contributor.authorSimoen, Eddy
dc.contributor.authorVeloso, Anabela
dc.contributor.authorMartino, Joao A.
dc.contributor.authorAgopian, Paula G. D.
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorVeloso, Anabela
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.accessioned2023-04-12T08:14:26Z
dc.date.available2022-05-27T02:22:58Z
dc.date.available2023-03-30T10:29:17Z
dc.date.available2023-04-12T08:14:26Z
dc.date.issued2022
dc.description.wosFundingTextThe authors acknowledge CNPq and CAPES for the financial support. The devices have been processed in the frame of imec's Core Partner Program on Logic Devices.
dc.identifier.doi10.1016/j.sse.2022.108238
dc.identifier.issn0038-1101
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/39900
dc.publisherPERGAMON-ELSEVIER SCIENCE LTD
dc.source.beginpage108238
dc.source.endpagena
dc.source.issueMarch
dc.source.journalSOLID-STATE ELECTRONICS
dc.source.numberofpages9
dc.source.volume189
dc.subject.keywordsANALOG
dc.subject.keywordsEFFICIENT
dc.subject.keywordsCIRCUITS
dc.title

Design of operational transconductance amplifier with Gate-All-Around Nanosheet MOSFET using experimental data from room temperature to 200 degrees C

dc.typeJournal article
dspace.entity.typePublication
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