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On the trap generation rate in ultrathin SiON under constant voltage stress

Date

2005-06
Journal article
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dc.contributor.authorDegraeve, Robin
dc.contributor.authorKaczer, Ben
dc.contributor.authorRoussel, Philippe
dc.contributor.authorGroeseneken, Guido
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorRoussel, Philippe
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecRoussel, Philippe::0000-0002-0402-8225
dc.date.accessioned2021-10-16T01:17:12Z
dc.date.available2021-10-16T01:17:12Z
dc.date.issued2005-06
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/10358
dc.source.beginpage440
dc.source.endpage443
dc.source.journalMicroelectronic Engineering
dc.title

On the trap generation rate in ultrathin SiON under constant voltage stress

dc.typeJournal article
dspace.entity.typePublication
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