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Advanced Ni-based FUlly SIlicidation (FUSI) technology for low-Vt CMOS devices

Date

2007
Proceedings Paper
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dc.contributor.authorYu, HongYu
dc.contributor.authorVeloso, Anabela
dc.contributor.authorLauwers, Anne
dc.contributor.authorBiesemans, Serge
dc.contributor.imecauthorVeloso, Anabela
dc.contributor.imecauthorLauwers, Anne
dc.contributor.imecauthorBiesemans, Serge
dc.date.accessioned2021-10-16T21:55:59Z
dc.date.available2021-10-16T21:55:59Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/13254
dc.source.conferenceSemicon Japan - STS
dc.source.conferencedate5/12/2007
dc.source.conferencelocationChiba Japan
dc.title

Advanced Ni-based FUlly SIlicidation (FUSI) technology for low-Vt CMOS devices

dc.typeProceedings paper
dspace.entity.typePublication
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