Publication:
Impact of crystal orientation on ohmic contact resistance of enhancement-mode pGaN gate high electron mobility transistors on 200 mm Si substrates
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1920 since deposited on 2021-10-26
2last month
Acq. date: 2025-12-12
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1920 since deposited on 2021-10-26
2last month
Acq. date: 2025-12-12
Citations