Publication:

Impact of crystal orientation on ohmic contact resistance of enhancement-mode pGaN gate high electron mobility transistors on 200 mm Si substrates

Date

2018
Journal article
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dc.contributor.authorVan Hove, Marleen
dc.contributor.authorPosthuma, Niels
dc.contributor.authorGeens, Karen
dc.contributor.authorWellekens, Dirk
dc.contributor.authorLi, Xiangdong
dc.contributor.authorDecoutere, Stefaan
dc.contributor.imecauthorPosthuma, Niels
dc.contributor.imecauthorGeens, Karen
dc.contributor.imecauthorWellekens, Dirk
dc.contributor.imecauthorLi, Xiangdong
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecPosthuma, Niels::0000-0002-6029-1909
dc.contributor.orcidimecGeens, Karen::0000-0003-1815-3972
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.date.accessioned2021-10-26T07:01:27Z
dc.date.available2021-10-26T07:01:27Z
dc.date.issued2018
dc.identifier.issn0021-4922
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/32066
dc.identifier.urlhttps://doi.org/10.7567/JJAP.57.04FG02
dc.source.beginpage04FG02-1
dc.source.endpage04FG02-4
dc.source.journalJapanese Journal of Applied Physics
dc.source.volume57
dc.title

Impact of crystal orientation on ohmic contact resistance of enhancement-mode pGaN gate high electron mobility transistors on 200 mm Si substrates

dc.typeJournal article
dspace.entity.typePublication
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