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Influence of activation annealing and silicidation process on dopant redistribution and pile-up at the NixSiy/SiO2 interface

Date

2005-05
Proceedings Paper
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dc.contributor.authorKmieciak, Malgorzata
dc.contributor.authorKittl, Jorge
dc.contributor.authorJanssens, Tom
dc.contributor.authorLauwers, Anne
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorKottantharayil, Anil
dc.contributor.authorSchram, Tom
dc.contributor.authorVeloso, Anabela
dc.contributor.authorVan Dal, Mark
dc.contributor.authorMaex, Karen
dc.contributor.authorVantomme, Andre
dc.contributor.imecauthorLauwers, Anne
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorSchram, Tom
dc.contributor.imecauthorVeloso, Anabela
dc.contributor.imecauthorVan Dal, Mark
dc.contributor.imecauthorMaex, Karen
dc.contributor.imecauthorVantomme, Andre
dc.date.accessioned2021-10-16T02:35:12Z
dc.date.available2021-10-16T02:35:12Z
dc.date.issued2005-05
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/10707
dc.source.beginpage241
dc.source.conferenceAdvanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS: New Materials, Processes, and Equipment
dc.source.conferencedate16/05/2005
dc.source.conferencelocationQuebec Canada
dc.source.endpage248
dc.title

Influence of activation annealing and silicidation process on dopant redistribution and pile-up at the NixSiy/SiO2 interface

dc.typeProceedings paper
dspace.entity.typePublication
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