Publication:

Understanding the kinetics of Metal Induced Lateral Crystallization process to enhance the poly-Si channel quality and current conduction in 3-D NAND memory

Date

2021
Proceedings Paper
https://doi.org/10.1109/IEDM19574.2021.9720571
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dc.contributor.authorRamesh, Siva
dc.contributor.authorVadakupudhu Palayam, Senthil
dc.contributor.authorAjaykumar, Arjun
dc.contributor.authorOpsomer, Karl
dc.contributor.authorBastos, Joao
dc.contributor.authorRagnarsson, Lars-Ake
dc.contributor.authorBreuil, Laurent
dc.contributor.authorArreghini, Antonio
dc.contributor.authorWouters, Lennaert
dc.contributor.authorSpampinato, Valentina
dc.contributor.authorFavia, Paola
dc.contributor.authorNalin Mehta, Ankit
dc.contributor.authorCarolan, Patrick
dc.contributor.authorNyns, Laura
dc.contributor.authorKatcko, Kostantine
dc.contributor.authorStiers, Jimmy
dc.contributor.authorVan den Bosch, Geert
dc.contributor.authorRosmeulen, Maarten
dc.contributor.imecauthorRamesh, Siva
dc.contributor.imecauthorVadakupudhu Palayam, Senthil
dc.contributor.imecauthorAjaykumar, Arjun
dc.contributor.imecauthorOpsomer, Karl
dc.contributor.imecauthorBastos, Joao
dc.contributor.imecauthorRagnarsson, Lars-Ake
dc.contributor.imecauthorBreuil, Laurent
dc.contributor.imecauthorArreghini, Antonio
dc.contributor.imecauthorWouters, Lennaert
dc.contributor.imecauthorSpampinato, Valentina
dc.contributor.imecauthorFavia, Paola
dc.contributor.imecauthorNalin Mehta, Ankit
dc.contributor.imecauthorCarolan, Patrick
dc.contributor.imecauthorNyns, Laura
dc.contributor.imecauthorKatcko, Kostantine
dc.contributor.imecauthorStiers, Jimmy
dc.contributor.imecauthorVan den Bosch, Geert
dc.contributor.imecauthorRosmeulen, Maarten
dc.contributor.orcidimecRamesh, Siva::0000-0002-8473-7258
dc.contributor.orcidimecBastos, Joao::0000-0002-8877-9850
dc.contributor.orcidimecRagnarsson, Lars-Ake::0000-0003-1057-8140
dc.contributor.orcidimecBreuil, Laurent::0000-0003-2869-1651
dc.contributor.orcidimecArreghini, Antonio::0000-0002-7493-9681
dc.contributor.orcidimecWouters, Lennaert::0000-0002-6730-9542
dc.contributor.orcidimecSpampinato, Valentina::0000-0003-3225-6740
dc.contributor.orcidimecFavia, Paola::0000-0002-1019-3497
dc.contributor.orcidimecNalin Mehta, Ankit::0000-0002-2169-940X
dc.contributor.orcidimecCarolan, Patrick::0000-0001-5931-3093
dc.contributor.orcidimecNyns, Laura::0000-0001-8220-870X
dc.contributor.orcidimecKatcko, Kostantine::0000-0002-0576-8962
dc.contributor.orcidimecVan den Bosch, Geert::0000-0001-9971-6954
dc.contributor.orcidimecRosmeulen, Maarten::0000-0002-3663-7439
dc.date.accessioned2022-07-11T09:55:47Z
dc.date.available2022-07-09T02:27:24Z
dc.date.available2022-07-11T09:55:47Z
dc.date.issued2021
dc.identifier.doi10.1109/IEDM19574.2021.9720571
dc.identifier.eisbn978-1-6654-2572-8
dc.identifier.issn2380-9248
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/40081
dc.publisherIEEE
dc.source.conferenceIEEE International Electron Devices Meeting (IEDM)
dc.source.conferencedateDEC 11-16, 2021
dc.source.conferencelocationSan Francisco
dc.source.journalna
dc.source.numberofpages4
dc.subject.keywordsTEMPERATURE
dc.subject.keywordsDEVICES
dc.title

Understanding the kinetics of Metal Induced Lateral Crystallization process to enhance the poly-Si channel quality and current conduction in 3-D NAND memory

dc.typeProceedings paper
dspace.entity.typePublication
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