Publication:

Predictive and prospective calibrated TCAD to improve device performances in sub-20 nm gate length p-FinFETs

Date

2024

Journal article

https://doi.org/10.35848/1347-4065/ad2a9d

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Author(s)

;

De Keersgieter, An

;

Matagne, Philippe

;

Chiarella, Thomas

;

Porret, Clément

;

Hikavyy, Andriy

;

Siew, Yong Kong

;

;

;

Horiguchi, Naoto

Journal

JAPANESE JOURNAL OF APPLIED PHYSICS

Statistics

115 since deposited on 2024-04-05

Acq. date: 2026-05-17