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Predictive and prospective calibrated TCAD to improve device performances in sub-20 nm gate length p-FinFETs

 
dc.contributor.authorEyben, Pierre
dc.contributor.authorDe Keersgieter, An
dc.contributor.authorMatagne, Philippe
dc.contributor.authorChiarella, Thomas
dc.contributor.authorPorret, Clément
dc.contributor.authorHikavyy, Andriy
dc.contributor.authorSiew, Yong Kong
dc.contributor.authorGoux, Ludovic
dc.contributor.authorMitard, Jerome
dc.contributor.authorHoriguchi, Naoto
dc.contributor.imecauthorEyben, Pierre
dc.contributor.imecauthorDe Keersgieter, An
dc.contributor.imecauthorMatagne, Philippe
dc.contributor.imecauthorChiarella, Thomas
dc.contributor.imecauthorSiew, Yong Kong
dc.contributor.imecauthorGoux, Ludovic
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.imecauthorPorret, Clément
dc.contributor.orcidimecEyben, Pierre::0000-0003-3686-556X
dc.contributor.orcidimecDe Keersgieter, An::0000-0002-5527-8582
dc.contributor.orcidimecChiarella, Thomas::0000-0002-6155-9030
dc.contributor.orcidimecSiew, Yong Kong::0009-0004-1634-4163
dc.contributor.orcidimecGoux, Ludovic::0000-0002-1276-2278
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.contributor.orcidimecMatagne, Philippe::0000-0003-0365-2066
dc.contributor.orcidimecPorret, Clément::0000-0002-4561-348X
dc.date.accessioned2025-07-03T11:52:31Z
dc.date.available2024-04-05T18:17:46Z
dc.date.available2025-07-03T11:52:31Z
dc.date.issued2024
dc.description.wosFundingTextThe imec pilot line, the imec TEM team, and amsimec test labs are acknowledged for their support.
dc.identifier.doi10.35848/1347-4065/ad2a9d
dc.identifier.issn0021-4922
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/43781
dc.publisherIOP Publishing Ltd
dc.source.beginpageArt. 04SP03
dc.source.endpageN/A
dc.source.issue4
dc.source.journalJAPANESE JOURNAL OF APPLIED PHYSICS
dc.source.numberofpages5
dc.source.volume63
dc.subject.keywordsGROWTH
dc.title

Predictive and prospective calibrated TCAD to improve device performances in sub-20 nm gate length p-FinFETs

dc.typeJournal article
dspace.entity.typePublication
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