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Suitability of high-k gate oxides for III-V devices: a PBTI study in In0.53 Ga0.47As devices with Al2O3
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1963 since deposited on 2021-10-22
1last month
Acq. date: 2026-01-11
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Metrics
Views
1963 since deposited on 2021-10-22
1last month
Acq. date: 2026-01-11
Citations