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Suitability of high-k gate oxides for III-V devices: a PBTI study in In0.53 Ga0.47As devices with Al2O3

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1965 since deposited on 2021-10-22
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Acq. date: 2026-02-25

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1965 since deposited on 2021-10-22
2last month
1last week
Acq. date: 2026-02-25

Citations