Publication:

Suitability of high-k gate oxides for III-V devices: a PBTI study in In0.53 Ga0.47As devices with Al2O3

Date

2014
Proceedings Paper
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dc.contributor.authorFranco, Jacopo
dc.contributor.authorAlian, AliReza
dc.contributor.authorKaczer, Ben
dc.contributor.authorLin, Dennis
dc.contributor.authorIvanov, Tsvetan
dc.contributor.authorPourghaderi, Mohammad Ali
dc.contributor.authorMartens, Koen
dc.contributor.authorMols, Yves
dc.contributor.authorZhou, Daisy
dc.contributor.authorWaldron, Niamh
dc.contributor.authorSioncke, Sonja
dc.contributor.authorKauerauf, Thomas
dc.contributor.authorCollaert, Nadine
dc.contributor.authorThean, Aaron
dc.contributor.authorHeyns, Marc
dc.contributor.authorGroeseneken, Guido
dc.contributor.imecauthorFranco, Jacopo
dc.contributor.imecauthorAlian, AliReza
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorLin, Dennis
dc.contributor.imecauthorIvanov, Tsvetan
dc.contributor.imecauthorMartens, Koen
dc.contributor.imecauthorMols, Yves
dc.contributor.imecauthorZhou, Daisy
dc.contributor.imecauthorWaldron, Niamh
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorThean, Aaron
dc.contributor.imecauthorHeyns, Marc
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecFranco, Jacopo::0000-0002-7382-8605
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecIvanov, Tsvetan::0000-0003-3407-2742
dc.contributor.orcidimecMartens, Koen::0000-0001-7135-5536
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.date.accessioned2021-10-22T01:31:02Z
dc.date.available2021-10-22T01:31:02Z
dc.date.embargo9999-12-31
dc.date.issued2014
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/23828
dc.identifier.urlhttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?tp=&arnumber=6861098&contentType=Conference+Publications
dc.source.beginpage6A.2.1
dc.source.conferenceInternational Reliability Physics Symposium - IRPS
dc.source.conferencedate8/06/2014
dc.source.conferencelocationWaikoloa, HI USA
dc.source.endpage6A.2.6
dc.title

Suitability of high-k gate oxides for III-V devices: a PBTI study in In0.53 Ga0.47As devices with Al2O3

dc.typeProceedings paper
dspace.entity.typePublication
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