Publication:

Self-Rectifying Memory Cell Based on SiGeAsSe Ovonic Threshold Switch

Date

2023-05
Journal article
https://doi.org/10.1109/TED.2023.3252491
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Accepted version 3.24 MB
Published version 1.9 MB

Author(s)

Ravsher, Taras  
;
Garbin, Daniele  
;
Fantini, Andrea  
;
Degraeve, Robin  
;
Clima, Sergiu  
;
Donadio, Gabriele Luca  
;
Kundu, Shreya  
;
Hody, Hubert  
;
Devulder, Wouter  
;
Van Houdt, Jan  
;
Afanas'ev, Valeri
;
Delhougne, Romain  
;
Kar, Gouri Sankar  

Journal

IEEE TRANSACTIONS ON ELECTRON DEVICES

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3 since deposited on 2023-04-09
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1209 since deposited on 2023-04-09
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Acq. date: 2026-01-11

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