Publication:

Self-Rectifying Memory Cell Based on SiGeAsSe Ovonic Threshold Switch

Date

2023-05
Journal article
https://doi.org/10.1109/TED.2023.3252491
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dc.contributor.authorRavsher, Taras
dc.contributor.authorGarbin, Daniele
dc.contributor.authorFantini, Andrea
dc.contributor.authorDegraeve, Robin
dc.contributor.authorClima, Sergiu
dc.contributor.authorDonadio, Gabriele Luca
dc.contributor.authorKundu, Shreya
dc.contributor.authorHody, Hubert
dc.contributor.authorDevulder, Wouter
dc.contributor.authorVan Houdt, Jan
dc.contributor.authorAfanas'ev, Valeri
dc.contributor.authorDelhougne, Romain
dc.contributor.authorKar, Gouri Sankar
dc.contributor.imecauthorRavsher, Taras
dc.contributor.imecauthorGarbin, Daniele
dc.contributor.imecauthorFantini, Andrea
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorClima, Sergiu
dc.contributor.imecauthorDonadio, Gabriele Luca
dc.contributor.imecauthorKundu, Shreya
dc.contributor.imecauthorHody, Hubert
dc.contributor.imecauthorDevulder, Wouter
dc.contributor.imecauthorVan Houdt, Jan
dc.contributor.imecauthorDelhougne, Romain
dc.contributor.imecauthorKar, Gouri Sankar
dc.contributor.orcidimecRavsher, Taras::0000-0001-7862-5973
dc.contributor.orcidimecGarbin, Daniele::0000-0002-5884-1043
dc.contributor.orcidimecFantini, Andrea::0000-0002-3220-8856
dc.contributor.orcidimecClima, Sergiu::0000-0002-4044-9975
dc.contributor.orcidimecKundu, Shreya::0000-0001-8052-7774
dc.contributor.orcidimecDevulder, Wouter::0000-0002-5156-0177
dc.contributor.orcidimecVan Houdt, Jan::0000-0003-1381-6925
dc.contributor.orcidimecHody, Hubert::0009-0000-1407-8755
dc.date.accessioned2023-07-05T12:06:22Z
dc.date.available2023-04-09T03:53:07Z
dc.date.available2023-04-22T15:06:29Z
dc.date.available2023-07-05T12:06:22Z
dc.date.embargo9999-12-31
dc.date.issued2023-05
dc.description.wosFundingTextThis work was supported in part by the imec Industrial Affiliation Program on Active Memory Devices and in part by the Research Foundation-Flanders (FWO) under Grant 1SD4721.
dc.identifier.doi10.1109/TED.2023.3252491
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/41439
dc.publisherIEEE
dc.source.beginpage2276
dc.source.endpage2281
dc.source.issue5
dc.source.journalIEEE TRANSACTIONS ON ELECTRON DEVICES
dc.source.numberofpages6
dc.source.volume70
dc.subject.disciplineApplied physics
dc.subject.disciplineElectrical & electronic engineering
dc.subject.disciplineMaterials science
dc.subject.keywordsPHASE-CHANGE MEMORY
dc.subject.keywordsAmorphous Chalcogenides
dc.subject.keywordsOvonic Threshold Switch (OTS)
dc.subject.keywordsSelf-selective memory
dc.subject.keywordsCross-point array
dc.subject.keywordsSiGeAsSe
dc.subject.keywordsPolarity effect
dc.subject.keywordsThreshold voltage
dc.title

Self-Rectifying Memory Cell Based on SiGeAsSe Ovonic Threshold Switch

dc.typeJournal article
dspace.entity.typePublication
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