Publication:

Impact of substrate resistivity on the vertical leakage, breakdown, and trapping in GaN-on-Si E-Mode HEMTs

Date

2018
Journal article
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dc.contributor.authorBorga, Matteo
dc.contributor.authorMeneghini, Matteo
dc.contributor.authorStoffels, Steve
dc.contributor.authorLi, Xiangdong
dc.contributor.authorPosthuma, Niels
dc.contributor.authorVan Hove, Marleen
dc.contributor.authorDecoutere, Stefaan
dc.contributor.authorMeneghesso, Gaudenzio
dc.contributor.authorZanoni, Enrico
dc.contributor.imecauthorBorga, Matteo
dc.contributor.imecauthorStoffels, Steve
dc.contributor.imecauthorLi, Xiangdong
dc.contributor.imecauthorPosthuma, Niels
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecBorga, Matteo::0000-0003-3087-6612
dc.contributor.orcidimecPosthuma, Niels::0000-0002-6029-1909
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.date.accessioned2021-10-25T16:52:17Z
dc.date.available2021-10-25T16:52:17Z
dc.date.issued2018
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/30301
dc.identifier.urlhttps://ieeexplore.ieee.org/document/8361493
dc.source.beginpage2765
dc.source.endpage2770
dc.source.issue7
dc.source.journalIEEE Transactions on Electron Devices
dc.source.volume65
dc.title

Impact of substrate resistivity on the vertical leakage, breakdown, and trapping in GaN-on-Si E-Mode HEMTs

dc.typeJournal article
dspace.entity.typePublication
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