Publication:

Interplay between dry etch and wet clean in patterning La2O3/HfO2-containing high-k/metal gate stacks

Date

2009
Proceedings Paper
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dc.contributor.authorVos, Ingrid
dc.contributor.authorHellin, David
dc.contributor.authorVrancken, Christa
dc.contributor.authorGeypen, Jef
dc.contributor.authorBender, Hugo
dc.contributor.authorVecchio, Emma
dc.contributor.authorParaschiv, Vasile
dc.contributor.authorVertommen, Johan
dc.contributor.authorBoullart, Werner
dc.contributor.imecauthorVos, Ingrid
dc.contributor.imecauthorHellin, David
dc.contributor.imecauthorVrancken, Christa
dc.contributor.imecauthorGeypen, Jef
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorVecchio, Emma
dc.contributor.imecauthorParaschiv, Vasile
dc.contributor.imecauthorVertommen, Johan
dc.contributor.imecauthorBoullart, Werner
dc.contributor.orcidimecBoullart, Werner::0000-0001-7614-2097
dc.date.accessioned2021-10-18T05:01:36Z
dc.date.available2021-10-18T05:01:36Z
dc.date.embargo9999-12-31
dc.date.issued2009
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/16507
dc.source.beginpage29
dc.source.conferenceCleaning and Surface Conditioning Technology in Semiconductor Device Manufacturing 11
dc.source.conferencedate4/10/2009
dc.source.conferencelocationVienna Austria
dc.source.endpage36
dc.title

Interplay between dry etch and wet clean in patterning La2O3/HfO2-containing high-k/metal gate stacks

dc.typeProceedings paper
dspace.entity.typePublication
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