Publication:

Demonstration of 2e12/cm-2-eV-1 2D-oxide interface trap density on back-gated MoS2 flake devices with 2.5nm EOT

Date

2017
Journal article
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dc.contributor.authorGaur, Abhinav
dc.contributor.authorBalaji, Yashwanth
dc.contributor.authorLin, Dennis
dc.contributor.authorAdelmann, Christoph
dc.contributor.authorVan Houdt, Jan
dc.contributor.authorHeyns, Marc
dc.contributor.authorMocuta, Dan
dc.contributor.authorRadu, Iuliana
dc.contributor.imecauthorGaur, Abhinav
dc.contributor.imecauthorBalaji, Yashwanth
dc.contributor.imecauthorLin, Dennis
dc.contributor.imecauthorAdelmann, Christoph
dc.contributor.imecauthorVan Houdt, Jan
dc.contributor.imecauthorHeyns, Marc
dc.contributor.imecauthorRadu, Iuliana
dc.contributor.orcidimecAdelmann, Christoph::0000-0002-4831-3159
dc.contributor.orcidimecVan Houdt, Jan::0000-0003-1381-6925
dc.contributor.orcidimecRadu, Iuliana::0000-0002-7230-7218
dc.date.accessioned2021-10-24T04:57:08Z
dc.date.available2021-10-24T04:57:08Z
dc.date.issued2017
dc.identifier.issn0167-9317
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/28375
dc.identifier.urlhttp://www.sciencedirect.com/science/article/pii/S0167931717302034
dc.source.beginpage145
dc.source.endpage149
dc.source.journalMicroelectronic Engineering
dc.source.volume178
dc.title

Demonstration of 2e12/cm-2-eV-1 2D-oxide interface trap density on back-gated MoS2 flake devices with 2.5nm EOT

dc.typeJournal article
dspace.entity.typePublication
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