Electron spin resonance analysis of sputtering-induced defects in advanced low-k insulators (k-2.0-2.5)

dc.contributor.author	Stesmans, Andre
dc.contributor.author	Nguyen, A.
dc.contributor.author	Houssa, Michel
dc.contributor.author	Afanasiev, Valeri
dc.contributor.author	Tokei, Zsolt
dc.contributor.author	Baklanov, Mikhaïl
dc.contributor.imecauthor	Stesmans, Andre
dc.contributor.imecauthor	Houssa, Michel
dc.contributor.imecauthor	Afanasiev, Valeri
dc.contributor.imecauthor	Tokei, Zsolt
dc.contributor.orcidimec	Houssa, Michel::0000-0003-1844-3515
dc.date.accessioned	2021-10-21T12:21:35Z
dc.date.available	2021-10-21T12:21:35Z
dc.date.embargo	9999-12-31
dc.date.issued	2013
dc.identifier.issn	0167-9317
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/23121
dc.identifier.url	http://www.sciencedirect.com/science/article/pii/S0167931713002955
dc.source.beginpage	240
dc.source.endpage	243
dc.source.journal	Microelectronic Engineering
dc.source.volume	109
dc.title	Electron spin resonance analysis of sputtering-induced defects in advanced low-k insulators (k-2.0-2.5)
dc.type	Journal article
dspace.entity.type	Publication
Files	Original bundle Name: 26911.pdf Size: 387.02 KB Format: Adobe Portable Document Format Download
Publication available in collections:	Articles

Date