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Low-temperature epitaxial SiGe:P for gate-all-around n-channel metal-oxide-semiconductor devices
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Low-temperature epitaxial SiGe:P for gate-all-around n-channel metal-oxide-semiconductor devices
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Date
2024
Journal article
https://doi.org/10.35848/1347-4065/ad75da
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Fujimoto, Yuta
;
Hikavyy, Andriy
;
Porret, Clément
;
Rosseel, Erik
;
Rengo, Gianluca
;
Loo, Roger
Journal
JAPANESE JOURNAL OF APPLIED PHYSICS
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120
since deposited on 2024-09-29
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Acq. date: 2026-04-07
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Views
120
since deposited on 2024-09-29
2
last month
Acq. date: 2026-04-07
Citations