Publication:

Low-temperature epitaxial SiGe:P for gate-all-around n-channel metal-oxide-semiconductor devices

Date

2024
Journal article
https://doi.org/10.35848/1347-4065/ad75da
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dc.contributor.authorFujimoto, Yuta
dc.contributor.authorHikavyy, Andriy
dc.contributor.authorPorret, Clément
dc.contributor.authorRosseel, Erik
dc.contributor.authorRengo, Gianluca
dc.contributor.authorLoo, Roger
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorRosseel, Erik
dc.contributor.imecauthorRengo, Gianluca
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorPorret, Clément
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimecRosseel, Erik::0000-0002-2737-8391
dc.contributor.orcidimecRengo, Gianluca::0000-0002-3410-6466
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecPorret, Clément::0000-0002-4561-348X
dc.date.accessioned2025-07-08T08:52:12Z
dc.date.available2024-09-29T18:03:38Z
dc.date.available2025-07-08T08:52:12Z
dc.date.issued2024
dc.description.wosFundingTextThe imec core CMOS program members, the European Commission, local authorities, and the imec pilot line are acknowledged for their support.
dc.identifier.doi10.35848/1347-4065/ad75da
dc.identifier.issn0021-4922
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/44579
dc.publisherIOP Publishing Ltd
dc.source.beginpageArt. 091003
dc.source.endpageN/A
dc.source.issue9
dc.source.journalJAPANESE JOURNAL OF APPLIED PHYSICS
dc.source.numberofpages7
dc.source.volume63
dc.subject.keywordsCHEMICAL-VAPOR-DEPOSITION
dc.subject.keywordsSOURCE/DRAIN FORMATION
dc.subject.keywordsGROWTH
dc.subject.keywordsSI
dc.subject.keywordsFILMS
dc.subject.keywordsTRISILANE
dc.subject.keywordsRPCVD
dc.subject.keywordsBORON
dc.title

Low-temperature epitaxial SiGe:P for gate-all-around n-channel metal-oxide-semiconductor devices

dc.typeJournal article
dspace.entity.typePublication
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