Publication:

In situ UHVEM study of {113}-defect formation in Si nanowires

Date

2015
Journal article
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dc.contributor.authorVanhellemont, Jan
dc.contributor.authorAnada, S.
dc.contributor.authorYasuda, H.
dc.contributor.authorVan Marcke, Patricia
dc.contributor.authorBender, Hugo
dc.contributor.authorRooyackers, Rita
dc.contributor.authorVandooren, Anne
dc.contributor.imecauthorVan Marcke, Patricia
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorVandooren, Anne
dc.contributor.orcidimecVandooren, Anne::0000-0002-2412-0176
dc.date.accessioned2021-10-23T00:26:15Z
dc.date.available2021-10-23T00:26:15Z
dc.date.embargo9999-12-31
dc.date.issued2015
dc.identifier.issn0268-1242
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/26107
dc.identifier.urlhttp://iopscience.iop.org/article/10.1088/0268-1242/30/11/114013/meta;jsessionid=D981C185B191F6BA224B7874A454D620.c3.iopscience.
dc.source.beginpage114013
dc.source.issue11
dc.source.journalSemiconductor Science and Technology
dc.source.volume30
dc.title

In situ UHVEM study of {113}-defect formation in Si nanowires

dc.typeJournal article
dspace.entity.typePublication
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