Publication:
Benefits and side effects of high temperature anneal used to reduce threading dislocation defects in epitaxial Ge Layers on Si substrates
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2039 since deposited on 2021-10-17
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Acq. date: 2026-07-27
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Statistics
Views
2039 since deposited on 2021-10-17
66last month
66last week
Acq. date: 2026-07-27
Citations