Publication:
Benefits and side effects of high temperature anneal used to reduce threading dislocation defects in epitaxial Ge Layers on Si substrates
Date
Loading...
Files
Journal
Abstract
Description
Statistics
Views
1972 since deposited on 2021-10-17
1last month
1last week
Acq. date: 2026-01-25
Citations
Statistics
Views
1972 since deposited on 2021-10-17
1last month
1last week
Acq. date: 2026-01-25
Citations